? semiconductor components industries, llc, 2006 october, 2016 ? rev. 8 1 publication order number: nss40200l/d nss40200l, nsv40200l 40 v, 2.0 a, low v ce(sat) pnp transistor on semiconductor?s e 2 poweredge family of low v ce(sat) transistors are miniature surface mount devices featuring ultra low saturation voltage (v ce(sat) ) and high current gain capability. these are designed for use in low voltage, high speed switching applications where affordable efficient energy control is important. typical applications are dc?dc converters and power management in portable and battery powered products such as cellular and cordless phones, pdas, computers, printers, digital cameras and mp3 players. other applications are low voltage motor controls in mass storage products such as disc drives and tape drives. in the automotive industry they can be used in air bag deployment and in the instrument cluster. the high current gain allows e 2 poweredge devices to be driven directly from pmu?s control outputs, and the linear gain (beta) makes them ideal components in analog amplifiers. features ? nsv prefix for automotive and other applications requiring unique site and control change requirements; aec?q101 qualified and ppap capable ? these devices are pb?free, halogen free/bfr free and are rohs compliant device package shipping ? ordering information nss40200lt1g sot?23 (pb?free) 3,000 / tape & ree l marking diagram collector 3 1 base 2 emitter sot?23 (to?236) case 318 style 6 ?40 volts 2.0 amps pnp low v ce(sat) transistor equivalent r ds(on) 80 m ?for information on tape and reel specifications, including part orientation and tape sizes, please refer to our tape and reel packaging specification brochure, brd8011/d. 1 va m va = specific device code* m = date code* = pb?free package (note: microdot may be in either location) *specific device code, date code or overbar orientation and/or location may vary depending upon manufacturing location. this is a representation only and actual devices may not match this drawing exactly. NSV40200LT1G sot?23 (pb?free) 3,000 / tape & ree l www. onsemi.com
nss40200l, nsv40200l www. onsemi.com 2 maximum ratings (t a = 25 c) rating symbol max unit collector-emitter voltage v ceo ?40 vdc collector-base voltage v cbo ?40 vdc emitter-base voltage v ebo ?7.0 vdc collector current ? continuous i c ?2.0 a collector current ? peak i cm ?4.0 a base current ? peak i bm ?300 ma electrostatic discharge esd hbm class 3b mm class c thermal characteristics characteristic symbol max unit total device dissipation t a = 25 c derate above 25 c p d (note 1) 460 3.7 mw mw/ c thermal resistance, junction?to?ambient r ja (note 1) 270 c/w total device dissipation t a = 25 c derate above 25 c p d (note 2) 540 4.3 mw mw/ c thermal resistance, junction?to?ambient r ja (note 2) 230 c/w total device dissipation (single pulse < 10 sec) p dsingle (note 3) 710 mw junction and storage temperature range t j , t stg ?55 to +150 c stresses exceeding those listed in the maximum ratings table may damage the device. if any of these limits are exceeded, device function ality should not be assumed, damage may occur and reliability may be affected. 1. fr? 4 @ 100 mm 2 , 1 oz. copper traces. 2. fr? 4 @ 500 mm 2 , 1 oz. copper traces. 3. thermal response.
nss40200l, nsv40200l www. onsemi.com 3 electrical characteristics (t a = 25 c unless otherwise noted) characteristic symbol min typ max unit off characteristics collector ?emitter breakdown voltage (i c = ?10 madc, i b = 0) v (br)ceo ?40 ? ? vdc collector ?base breakdown voltage (i c = ?0.1 madc, i e = 0) v (br)cbo ?40 ? ? vdc emitter ?base breakdown voltage (i e = ?0.1 madc, i c = 0) v (br)ebo ?7.0 ? ? vdc collector cutoff current (v cb = ?40 vdc, i e = 0) i cbo ? ? ?0.1 adc emitter cutoff current (v eb = ?7.0 vdc) i ebo ? ? ?0.1 adc on characteristics dc current gain (note 4) (i c = ?10 ma, v ce = ?2.0 v) (i c = ?500 ma, v ce = ?2.0 v) (i c = ?1.0 a, v ce = ?2.0 v) (i c = ?2.0 a, v ce = ?2.0 v) h fe 250 220 180 150 ? 300 ? ? ? ? ? ? collector ?emitter saturation voltage (note 4) (i c = ?0.1 a, i b = ?0.010 a) (note 5) (i c = ?1.0 a, i b = ?0.100 a) (i c = ?1.0 a, i b = ?0.010 a) (i c = ?2.0 a, i b = ?0.200 a) v ce(sat) ? ? ? ? ?0.010 ?0.080 ?0.135 ?0.135 ?0.017 ?0.095 ?0.170 ?0.170 v base ?emitter saturation voltage (note 4) (i c = ?1.0 a, i b = ?0.01 a) v be(sat) ? ? ?0.900 v base ?emitter turn?on voltage (note 4) (i c = ?1.0 a, v ce = ?2.0 v) v be(on) ? ? ?0.900 v cutoff frequency (i c = ?100 ma, v ce = ?5.0 v, f = 100 mhz) f t 100 ? ? mhz input capacitance (v eb = 0.5 v, f = 1.0 mhz) cibo ? ? 325 pf output capacitance (v cb = 3.0 v, f = 1.0 mhz) cobo ? ? 62 pf switching characteristics delay (v cc = ?30 v, i c = 750 ma, i b1 = 15 ma) t d ? ? 60 ns rise (v cc = ?30 v, i c = 750 ma, i b1 = 15 ma) t r ? ? 120 ns storage (v cc = ?30 v, i c = 750 ma, i b1 = 15 ma) t s ? ? 400 ns fall (v cc = ?30 v, i c = 750 ma, i b1 = 15 ma) t f ? ? 130 ns product parametric performance is indicated in the electrical characteristics for the listed test conditions, unless otherwise noted. product performance may not be indicated by the electrical characteristics if operated under different conditions. 4. pulsed condition: pulse width = 300 msec, duty cycle 2%. 5. guaranteed by design but not tested.
nss40200l, nsv40200l www. onsemi.com 4 typical characteristics ?55 c v ce(sat) = 150 c ic/ib = 10 25 c figure 1. collector emitter saturation voltage vs. collector current figure 2. collector emitter saturation voltage vs. collector current i c , collector current (a) 10 1.0 0.1 0.01 0.001 0 0.05 0.1 0.15 0.2 0.25 figure 3. dc current gain vs. collector current figure 4. base emitter saturation voltage vs. collector current i c , collector current (a) i c , collector current (a) 10 1.0 0.1 0.01 0.001 100 150 300 350 500 700 750 800 10 1.0 0.1 0.01 0.001 0.3 0.4 0.5 0.6 0.7 0.8 1.0 1.1 figure 5. base emitter turn?on voltage vs. collector current figure 6. saturation region i c , collector current (a) i b , base current (ma) 10 1.0 0.1 0.01 0.001 0.1 0.2 0.3 0.4 0.5 0.8 0.9 1.0 100 10 1.0 0.1 0.01 0 0.2 0.4 0.6 0.8 1.0 v ce(sat) , collector emitter saturation voltage (v) h fe , dc current gain v be(sat) , base emitter saturation voltage (v) v be(on) , base emitter turn?on voltage (v) v ce , collector?emitter voltage (v) ic/ib = 100 25 c ?55 c i c , collector current (a) 10 1.0 0.1 0.01 0.001 0 0.05 0.1 0.15 0.2 0.35 v ce(sat) , collector emitter saturation voltage (v) v ce(sat) = 150 c 0.25 0.3 650 600 550 200 250 400 450 0.9 150 c (5.0 v) 150 c (2.0 v) 25 c (5.0 v) 25 c (2.0 v) ?55 c (5.0 v) ?55 c (2.0 v) 25 c ?55 c 150 c 0.6 0.7 25 c ?55 c 150 c v ce = ?2.0 v v ce (v) i c = 500 ma 300 ma 10 ma 100 ma ic/ib = 10
nss40200l, nsv40200l www. onsemi.com 5 typical characteristics 10 ms 100 ms 1 s thermal limit 1 ms c ibo (pf) figure 7. input capacitance figure 8. output capacitance v eb , emitter base voltage (v) 4.0 3.0 2.0 1.0 0 125 150 300 325 figure 9. safe operating area v ce (v dc ) 100 1.0 0.1 0.01 0.01 0.1 10 c ibo , input capacitance (pf) i c (a) v cb , collector base voltage (v) 35 15 10 0 20 70 50 80 100 c obo , output capacitance (pf) 90 6.0 5.0 200 225 250 275 175 c obo (pf) 5.0 30 25 20 1.0 10 60 100 30 40
nss40200l, nsv40200l www. onsemi.com 6 package dimensions sot?23 (to?236) case 318?08 issue ar d a1 3 1 2 notes: 1. dimensioning and tolerancing per asme y14.5m, 1994. 2. controlling dimension: millimeters. 3. maximum lead thickness includes lead finish. minimum lead thickness is the minimum thickness of the base material. 4. dimensions d and e do not include mold flash, protrusions, or gate burrs. soldering footprint* view c l 0.25 l1 e e e b a see view c dim a min nom max min millimeters 0.89 1.00 1.11 0.035 inches a1 0.01 0.06 0.10 0.000 b 0.37 0.44 0.50 0.015 c 0.08 0.14 0.20 0.003 d 2.80 2.90 3.04 0.110 e 1.20 1.30 1.40 0.047 e 1.78 1.90 2.04 0.070 l 0.30 0.43 0.55 0.012 0.039 0.044 0.002 0.004 0.017 0.020 0.006 0.008 0.114 0.120 0.051 0.055 0.075 0.080 0.017 0.022 nom max l1 h 2.10 2.40 2.64 0.083 0.094 0.104 h e 0.35 0.54 0.69 0.014 0.021 0.027 c 0 ??? 10 0 ??? 10 t t 3x top view side view end view 2.90 0.80 dimensions: millimeters 0.90 pitch 3x 3x 0.95 recommended *for additional information on our pb?free strategy and soldering details, please download the on semiconductor soldering and mounting techniques reference manual, solderrm/d. style 6: pin 1. base 2. emitter 3. collector on semiconductor and are trademarks of semiconductor components industries, llc dba on semiconductor or its subsidiaries i n the united states and/or other countries. on semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. a listing of on semiconductor?s product/patent coverage may be accessed at www.onsemi.com/site/pdf/patent?marking.pdf . on semiconductor reserves the right to make changes without further notice to any products herein. on semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular pu rpose, nor does on semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without li mitation special, consequential or incidental damages. buyer is responsible for its products and applications using on semiconductor products, including compliance with all laws, regulatio ns and safety requirements or standards, regardless of any support or applications information provided by on semiconductor. ?typical? parameters which may be provided in on semicond uctor data sheets and/or specifications can and do vary in dif ferent applications and actual performance may vary over time. all operating parameters, including ?typicals? mus t be validated for each customer application by customer?s technical experts. on semiconductor does not convey any license under its patent rights nor the rights of others. on semiconduc tor products are not designed, intended, or authorized for use as a critical component in life support systems or any fda class 3 medical devices or medical devices with a same or si milar classification in a foreign jurisdiction or any devices intended for implantation in the human body. should buyer purchase or use on semiconductor products for any such unintended or unauthorized application, buyer shall indemnify and hold on semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, cost s, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized u se, even if such claim alleges that on semiconductor was negligent regarding the design or manufacture of the part. on semiconductor is an equal opportunity/affirmative action employer . this literature is subject to all applicable copyright laws and is not for resale in any manner. p ublication ordering information n. american technical support : 800?282?9855 toll free usa/canada europe, middle east and africa technical support: phone: 421 33 790 2910 japan customer focus center phone: 81?3?5817?1050 nss40200l/d literature fulfillment : literature distribution center for on semiconductor 19521 e. 32nd pkwy, aurora, colorado 80011 usa phone : 303?675?2175 or 800?344?3860 toll free usa/canada fax : 303?675?2176 or 800?344?3867 toll free usa/canada email : orderlit@onsemi.com on semiconductor website : www.onsemi.com order literature : http://www.onsemi.com/orderlit for additional information, please contact your loc al sales representative ?
|
